DMC42P1106 Просмотр технического описания (PDF) - Daewoo Semiconductor

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производитель

DMC42P1106

4Bit Single Chip Microcontroller

Daewoo Semiconductor 

4Bit Single Chip Microcontroller

11

DMC42C1106

DC ELECTRICAL CHARACTERISTICS

(VSS = 0, VDD = 5V ±10%, TA = 25¡É, fX = 4.19MHz)

PARAMETER SYMBOL

TEST

CONDITION

Low Level

VIL1 Port 0, 1 (Schmitt Input)

Input Voltage

VIL2 Port 2, 4, A, B, C, RESETB, TEST

VIL3 XI, XTI

High Level

VIH1 Port 0, 1 (Schmitt Input)

Input Voltage

VIH2 Port 2, 4, A, B, C, RESETB, TEST

VIH3 XI, XTI

Low Level

Output Voltage

VOL1

VOL2

Port 4, C (Open Drain)

Port 0, 1, 2, A, B

IIOL=1.6m

VOL3 VDD = 4.5V, SEG20

High Level

VOH1 Port 0, 1, 2, A, B

IOH= -

Output Voltage VOH2 SEG20

Low Level Input ILIL1 VDD = 6V, Port 0, 1, 2, 4, A, B, C

Leakage Current

VPPOEX, TEST, XTI

ILIL2 VDD = 6V, XI

High Level Input ILIH1 VDD = 6V, Port 0, 1, 2, 4, A, B, C

Leakage Current

VPPOEX, RESETB, XTI

ILIH2 VDD = 6V, XI

Supply Current

Normal Mode

IDD1

(1)

Xin = 4.19MHz

Vdd = 5V ±10%

Xtin = 32.768KHz

IDD2

(1)

Standby Mode

Xin = 0

Vdd = 5V ±10%

Xtin = 32.768KHz

Standby Mode

IDD3

(2)

Xin = 0

Vdd = 3V ±10%

Xtin = 32.768KHz

Stop Mode

IDD4

(2)

Xin = 0

Xtin = 0

Vdd = 5V ±10%

MIN.

-

-

-

0.8

0.7

VDD -

-

-

-

VDD -

VDD -

-

-

-

-

-

-

-

-

LIMIT

UNIT

TYP. MAX.

-

0.2

- 0.3 VDD V

-

0.4

-

VDD

-

VDD

V

-

VDD

-

2

-

0.4

V

-

0.6

-

-

V

-

-

-1.2

-3

uA

-5

-15

1.2

3

uA

5

15

-

8

mA

-

2

mA

30

50 uA

1

5

uA

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