STB60NE06-16T4 Просмотр технического описания (PDF) - STMicroelectronics

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производитель

STB60NE06-16T4

N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET

STMicroelectronics 

STB60NE06-16

Switching Safe Operating Area

Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuit

Fig. 2: Unclamped Inductive Waveform

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