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Компоненты Описание
STB60NE06-16 Просмотр технического описания (PDF) - STMicroelectronics
Номер в каталоге
Компоненты Описание
производитель
STB60NE06-16
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET
STMicroelectronics
STB60NE06-16 Datasheet PDF : 9 Pages
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STB60NE06-16
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
S ymb ol
t
d(on)
t
r
(di/ dt )
on
Q
g
Q
gs
Q
gd
P a ra m et er
Turn-on Time
Rise Time
Turn-on Current Slope
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Test Conditions
V
DD
= 30 V
R
G
=4.7
Ω
V
DD
= 48 V
R
G
= 47
Ω
V
DD
= 48 V
I
D
= 30 A
V
GS
= 10 V
I
D
= 60 A
V
GS
=10 V
I
D
= 60 A V
GS
= 10 V
Min.
Typ .
40
125
280
115
25
40
Max.
60
180
160
Unit
ns
ns
A/
µ
s
nC
nC
nC
SWITCHING OFF
S ymb ol
t
r(Vo f f)
t
f
t
c
P a ra m et er
Off-voltage Rise Time
Fall Time
Cross-over Time
Test Conditions
V
DD
= 48 V I
D
= 60 A
R
G
=4.7
Ω
V
GS
= 10 V
Min.
Typ .
15
150
180
Max.
25
210
260
Unit
ns
ns
ns
SOURCE DRAIN DIODE
S ymb ol
P a ra m et er
Test Conditions
I
SD
I
SDM
(
•
)
Source-drain Current
Source-drain Current
(pulsed)
V
SD
(
∗
) Forward On Voltage
I
SD
= 60 A V
GS
= 0
t
rr
Reverse Recovery
Time
Q
rr
Reverse Recovery
Charge
I
SD
= 60 A
V
DD
= 30 V
I
RRM
Reverse Recovery
Current
(
∗
) Pulsed: Pulse duration = 300
µ
s, duty cycle 1.5 %
(
•
) Pulse width limited by safe operating area
di/dt = 100 A/
µ
s
T
j
= 150
o
C
Min.
Typ .
Max.
60
240
Unit
A
A
1.5
V
100
ns
0.4
µ
C
8
A
Safe Operating Area
Thermal Impedance
3/9
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