STB60NE06-16 Просмотр технического описания (PDF) - STMicroelectronics

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STB60NE06-16

N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET

STMicroelectronics 

STB60NE06-16

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE™ ” POWER MOSFET

TYPE

STB60NE06-1

V DSS

60 V

RDS(on)

< 0.016 Ω

ID

60 A

s TYPICAL RDS(on) = 0.013 Ω

s EXCEPTIONAL dV/dt CAPABILTY

s 100% AVALANCHE TESTED

s LOW GATE CHARGE 100 oC

s HIGH dV/dt CAPABILITY

s APPLICATION ORIENTED

CHARACTERIZATION

s FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ” Single Feature Size™ ”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s DC MOTOR CONTROL

s DC-DC & DC-AC CONVERTERS

s SYNCHRONOUS RECTIFICATION

3

1

D2PAK

TO-263

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

VDS

VD GR

VGS

ID

ID

Drain-source Voltage (VGS = 0)

Drain- gate Voltage (RGS = 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at Tc = 25 oC

Drain Current (continuous) at Tc = 100 oC

IDM(•)

Ptot

Drain Current (pulsed)

Total Dissipation at Tc = 25 oC

Derating Factor

dV/dt(1) Peak Diode Recovery voltage slope

Tstg St orage Temperature

Tj

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

January 1998

Value

Uni t

60

V

60

V

± 20

V

60

A

42

A

240

A

150

W

1

W/oC

6

-65 to 175

175

(1) ISD ≤ 60 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX

V/ ns

oC

oC

1/9

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