BCW66H Просмотр технического описания (PDF) - NXP Semiconductors.
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BCW66H Datasheet PDF : 14 Pages
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Nexperia
1.2
IC
(A)
0.8
0.4
006aaa141
(6) (5) (4) (3) (2) (1)
(7)
(8)
(9)
(10)
BCW66 series
45 V, 800 mA NPN general-purpose transistor
1.2
IC
(A)
0.8
0.4
006aaa142
(6) (5) (4) (3) (2) (1)
(7)
(8)
(9)
(10)
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
(1) IB = 13.0 mA
(2) IB = 11.7 mA
(3) IB = 10.4 mA
(4) IB = 9.1 mA
(5) IB = 7.8 mA
(6) IB = 6.5 mA
(7) IB = 5.2 mA
(8) IB = 3.9 mA
(9) IB = 2.6 mA
(10) IB = 1.3 mA
Figure 13. BCW66G: Collector current as a function of
collector-emitter voltage; typical values
0
0
1
2
3
4
5
VCE (V)
Tamb = 25 °C
(1) IB = 12.0 mA
(2) IB = 10.8 mA
(3) IB = 9.6 mA
(4) IB = 8.4 mA
(5) IB = 7.2 mA
(6) IB = 6.0 mA
(7) IB = 4.8 mA
(8) IB = 3.6 mA
(9) IB = 2.4 mA
(10) IB = 1.2 mA
Figure 14. BCW66H: Collector current as a function of
collector-emitter voltage; typical values
11 Test information
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
BCW66x_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 21 April 2017
© Nexperia B.V. 2017. All rights reserved.
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