EBS11RC4ACNA Просмотр технического описания (PDF) - Elpida Memory, Inc
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EBS11RC4ACNA Datasheet PDF : 15 Pages
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EBS11RC4ACNA
Notes: 1. ICC depends on output load condition when the device is selected. ICC (max.) is specified at the output
open condition.
2. One bank operation.
3. Input signals are changed once per one clock.
4. Input signals are changed once per two clocks.
5. Input signals are changed once per four clocks.
6. After power down mode, CLK operating current.
7. After self refresh mode set, self refresh current.
DC Characteristics2 (TA = 0 to 70°C, VDD = 3.3V ± 0.3V, VSS = 0V)
Parameter
Input leakage current
Symbol
min.
ILI
–10
max.
Unit
10
µA
Output leakage current
ILO
–10
10
µA
Output high voltage
VOH
2.4
—
V
Output low voltage
VOL
—
0.4
V
Test condition
0 ≤ VIN ≤ VDD
0 ≤ VOUT ≤ VDD
DQ = disable
IOH = –4mA
IOL = 4mA
Notes
Pin Capacitance (TA = 25°C, VDD = 3.3V ± 0.3V)
Parameter
Symbol
Pins
max.
Unit
Input capacitance
CI1
Address
25
pF
CI2
/RAS, /CAS, /WE
25
pF
CI3
CKE
25
pF
CI4
/CS
20
pF
CI5
CLK
45
pF
CI6
DQMB
20
pF
Data input/output capacitance
CI/O1
DQ, CB
25
pF
Notes: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. Measurement condition: f = 1MHz, 1.4V bias, 200mV swing.
3. DQMB = VIH to disable Data-out.
4. This parameter is sampled and not 100% tested.
Notes
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 4
1, 2, 3, 4
Data Sheet E0106E30 (Ver. 3.0)
9
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