FZT1051A Просмотр технического описания (PDF) - Zetex => Diodes
Номер в каталоге
Компоненты Описание
производитель
FZT1051A Datasheet PDF : 3 Pages
| |||
FZT1051A
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO 150
190
V
IC=100µA
Collector-Emitter
Breakdown Voltage
VCES
150 190
V
IC=100µA *
Collector-Emitter
Breakdown Voltage
VCEO
40
60
V
IC=10mA
Collector-Emitter
Breakdown Voltage
VCEV
150 190
V
IC=100µA, VEB=1V
Emitter-Base Breakdown V(BR)EBO 5
9
Voltage
V
IE=100µA
Collector Cut-Off Current ICBO
0.3
10
nA
VCB=120V
Emitter Cut-Off Current IEBO
0.3
10
nA
VEB=4V
Collector Emitter Cut-Off ICES
Current
0.3
10
nA
VCES=120V
Collector-Emitter
Saturation Voltage
VCE(sat)
17
25
mV
IC=0.2A, IB=10mA*
85
120
mV
IC=1A, IB=10mA*
140
180
mV
IC=2A, IB= 20mA*
250
340
mV
IC=5A, IB=100mA*
Base-Emitter
Saturation Voltage
VBE(sat)
980
1100 mV
IC=5A, IB=100mA*
Base-Emitter Turn-On
Voltage
VBE(on)
915
1000 mV
IC=5A, VCE=2V*
Static Forward Current hFE
Transfer Ratio
290 440
270 450 1200
130 220
40
55
IC=10mA, VCE=2V*
IC=1A, VCE=2V*
IC=5A, VCE=2V*
IC=10A, VCE=2V*
Transition Frequency
fT
155
MHz IC=50mA, VCE=10V
f=100MHz
Output Capacitance
Cobo
27
40
pF
VCB=10V, f=1MHz
Turn-on Time
ton
220
ns
IC=3A, IB=30mA, VCC=10V
Turn-off Time
toff
540
ns
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
Share Link: 