CY7C1061DV33-10BVXI Просмотр технического описания (PDF) - Cypress Semiconductor
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CY7C1061DV33-10BVXI Datasheet PDF : 18 Pages
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CY7C1061DV33
Maximum Ratings
Exceeding maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Supply
relative
Voltage
to GND
on
[5]
VCC
........................................–0.5
V
to
+4.6
V
DC Voltage Applied to Outputs
in High Z State [5] ................................ –0.5 V to VCC + 0.5 V
DC Input Voltage [5] ............................ –0.5 V to VCC + 0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) .................................. >2001 V
Latch Up Current .................................................... >200 mA
Operating Range
Range
Industrial
Ambient Temperature
–40 C to +85 C
VCC
3.3 V 0.3 V
DC Electrical Characteristics
Over the Operating Range
Parameter
Description
Test Conditions
VOH
Output HIGH voltage
VCC = Min, IOH = –4.0 mA
VOL
Output LOW voltage
VCC = Min, IOL = 8.0 mA
VIH
Input HIGH voltage
–
VIL
Input LOW voltage [5]
–
IIX
Input leakage current
GND < VI < VCC
IOZ
Output leakage current
GND < VOUT < VCC, Output disabled
ICC
VCC operating supply current VCC = Max, f = fMAX = 1/tRC, IOUT = 0 mA,
CMOS levels
ISB1
Automatic CE power down
Max VCC, CE1 > VIH, CE2 < VIL,
current – TTL inputs
VIN > VIH or VIN < VIL, f = fMAX
ISB2
Automatic CE power down
Max VCC, CE1 > VCC – 0.3 V, CE2 < 0.3 V,
current – CMOS inputs
VIN > VCC – 0.3 V, or VIN < 0.3 V, f = 0
-10
Unit
Min
Max
2.4
–
V
–
0.4
V
2.0
–0.3
VCC + 0.3 V
0.8
V
–1
+1
A
–1
+1
A
–
175
mA
–
30
mA
–
25
mA
Note
5. VIL(min) = –2.0 V and VIH(max) = VCC + 2 V for pulse durations of less than 20 ns.
Document Number: 38-05476 Rev. *H
Page 5 of 17
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