MMBT2131T1 Просмотр технического описания (PDF) - ON Semiconductor
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MMBT2131T1 Datasheet PDF : 4 Pages
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MMBT2131T1
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector −Base Breakdown Voltage
Collector −Emitter Breakdown Voltage
(IC = 100 mA) V(BR)CBO
40
−
(IC = 10 mA) V(BR)CEO
30
−
−
V
−
V
Emitter−Base Breakdown Voltage
(IE = 100 mA) V(BR)EBO
5.0
−
−
V
Collector Cutoff Current
(VCB = 25 V, IE = 0 A)
ICBO
−
(VCB = 25 V, IE = 0 A, TA = 125°C)
−
−
1.0
mA
−
10
Emitter Cutoff Current
ON CHARACTERISTICS
(VEB = 5.0 V, IC = 0 A)
IEBO
−
−
10
mA
DC Current Gain
(VCE = 3.0 V, IC = 100 mA)
hFE
150
−
−
V
Collector −Emitter Saturation Voltage
(IC = 500 mA, IB = 50 mA) VCE(sat)
−
Collector −Emitter Saturation Voltage
(IC = 700 mA, IB = 70 mA) VCE(sat)
−
−
0.25
V
−
0.4
V
Base−Emitter Saturation Voltage
(IC = 700 mA, IB = 70 mA) VBE(sat)
−
Collector−Emitter Saturation Voltage
(IC = 700 mA, VCE = 1.0 V) VBE(on)
−
−
1.1
V
−
1.0
V
0.5
0.2
0.5 A
0.4
0.15
0.3
0.7 A
0.1
0.2
0.5 A
0.1 A
0.1
0.1 A
10 mA
IC = 1.0 mA
0.05
10 mA
IC = 1.0 mA
0
0
0.000001 0.00001 0.0001
0.001
0.01
0.1
0.000001 0.00001 0.0001
0.001
0.01
0.1
IB, BASE CURRENT (A)
IB, BASE CURRENT (A)
Figure 1. Collector Saturation Region
Figure 2. Collector Saturation Region
1000
1.0
VCE = 3.0 V
VBE(sat)
100
0.01
150°C
25°C
−40°C
0.1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
0.1
VCE(sat)
0.01
1.0
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
IC/IB = 10
1.0
Figure 4. “ON” Voltages
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