NEZ1414-5E Просмотр технического описания (PDF) - NEC => Renesas Technology
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NEZ1414-5E Datasheet PDF : 4 Pages
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5 W 14 GHz INTERNALLY NEZ1414-5E
MATCHED POWER GaAs MESFET
FEATURES
• HIGH OUTPUT POWER: 37.0 dBm TYP
• HIGH LINEAR GAIN: 7.0 dB TYP
• HIGH EFFICIENCY: 30% TYP
• INDUSTRY STANDARD PACKAGING
• INTERNALLY MATCHED FOR OPTIMUM
PERFORMANCE IN 14.0 TO 14.5 GHz BAND
DESCRIPTION
The NEZ1414-5E is a Ku band GaAs MESFET designed for
transmit amplifiers used in VSAT terminals. The device is
internally matched for the 14.0 to 14.5 GHz band and can
deliver 5 W of output power when biased with 10 V. The device
incorporates a Wsi (tungsten silicide) gate structure for high
reliability, SiO2 glassivation for surface stability, and a plated
heat sink for reduced thermal resistance.
The NEZ1414-5E transistors are manufactured to NEC's strin-
gent quality assurance standards to ensure highest reliability
and consistent superior performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE X-17
8.25 ± 0.15
9.7 ± 0.13
1.8 ± 0.1
GATE
SOURCE
DRAIN
2.74 ± 0.1
R 0.65
0.5±0.07
13 ± 0.1
16.5 ± 0.13
9 ± 0.3
3.0 ± 0.2
0.2 MAX
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOLS
PART NUMBER
CHARACTERISTICS
P1dB
Power Out at 1dB Compression
GL
ηADD
IDS
IDSS
VP
BVGD
RTH
Linear Gain
Power Added Efficiency, PIN = 32.0 dBM
Drain Current
Saturated Drain Current
Pinch-off Voltage
Gate-Drain Breakdown Voltage
Thermal Resistance
UNITS
dBm
dB
%
A
A
V
V
°C/W
NEZ1414-5E
MIN
TYP
MAX
36.0
37.0
6.5
7.0
30
2.0
2.3
1.4
3.2
5.0
-3.0
-1.3
-0.5
15
5.0
TEST CONDITIONS
f = 14.0 to 14.5 GHz
VDS = 10 V
IDSQ = 1.5 A
Rg = 50 Ω
VDS = 1.5 V, VGS = 0 V
VDS = 2.5 V; IDS = 40 mA
IGD = 40 mA
Channel to Case
California Eastern Laboratories
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