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CZT2000 Просмотр технического описания (PDF) - TY Semiconductor
Номер в каталоге
Компоненты Описание
производитель
CZT2000
PNP Silicon Extremely High Voltage Darlington Transistor
TY Semiconductor
CZT2000 Datasheet PDF : 1 Pages
1
Product specification
CZT2000
Features
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
SOT-223
6.50
+0.2
-0.2
Unit: mm
3.50
+0.2
-0.2
3.00
+0.1
-0.1
4
0.90
+0.2
-0.2
7.00
+0.3
-0.3
1
2
3
2.9
4.6
0.70
+0.1
-0.1
1 Base
2 Collector
3 Emitter
4 Collector
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
stg
È
JA
Rating
200
200
10
600
2
-65 to 150
62.5
Unit
V
V
V
mA
W
/W
Electrical Characteristics Ta = 25
Symbol
I
CBO
I
EBO
B
VCES
V
CE(SAT)
V
CE(SAT)
V
CE(SAT)
V
BE(ON)
h
FE
Testconditons
V
CB
=180V
V
BE
=10V
I
C
=1.0mA
I
C
=20mA, I
B
=25ìA
I
C
=80mA, I
B
=40ìA
I
C
=160mA, I
B
=100ìA
V
CE
=5.0V, I
C
=160mA
V
CE
=5.0V, I
C
=100ìA
V
CE
=5.0V, I
C
=10mA
V
CE
=5.0V, I
C
=160mA
Min Max Unit
500 nA
100 nA
200
V
0.9 V
1.1 V
1.2 V
2.0 V
3,000
3,000
3,000
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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