Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
Номер в каталоге
Компоненты Описание
CFY30(2000) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
CFY30
(Rev.:2000)
GaAs FET
Infineon Technologies
CFY30 Datasheet PDF : 8 Pages
1
2
3
4
5
6
7
8
CFY 30
Electrical Characteristics
T
A
= 25
°
C, unless otherwise specified
Characteristics
Symbol
Limit Values
min. typ. max.
Drain-source saturation
I
DSS
current
20 50 80
Pinch-off voltage
V
GS(P)
– 0.5 – 1.3 – 4.0
Transconductance
g
m
20 30 –
Gate leakage current
I
G
–
0.1 2
Noise figure
NF
f
= 4 GHz
f
= 6 GHz
Associated gain
G
a
f
= 4 GHz
f
= 6 GHz
Maximum available gain MAG
–
1.4 1.6
–
2.0 –
10 11.5 –
–
8.9 –
–
11.2 –
Maximum stable gain MSG
–
14.4 –
Power output at 1 dB
P
– 1 dB
–
compression
16 –
Unit
mA
V
mS
µ
A
dB
dB
dB
dB
dBm
Test
Conditions
V
DS
= 3.5 V
V
GS
= 0 V
V
DS
= 3.5 V
I
D
= 1 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
V
DS
= 3.5 V
I
D
= 15 mA
f
= 6 GHz
V
DS
= 3.5 V
I
D
= 15 mA
f
= 4 GHz
V
DS
= 4 V
I
D
= 30 mA
f
= 6 GHz
Data Book
2
03.00
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]