CF750(1999) Просмотр технического описания (PDF) - Infineon Technologies
Номер в каталоге
Компоненты Описание
производитель
CF750 Datasheet PDF : 9 Pages
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CF 750
Typical Common Source S-Parameters
Bias conditions: VDGND = 3.8 V, ID = 2 mA
Source-Pad RF-grounded by capacitor with low inductance (< 0.5 nH)!
f
S11
S21
S12
S22
GHz
MAG ANG MAG ANG MAG ANG MAG ANG
0.01
0.97 – 1
1.78 179
0.002 89
0.98 – 1
0.1
0.97 – 3
1.78 175
0.008 84
0.98 – 2
0.25
0.96 – 8
1.76 169
0.015 78
0.97 – 6
0.5
0.94 – 16 1.73 155
0.027 75
0.95 – 11
0.75
0.91 – 26 1.70 141
0.039 71
0.93 – 16
1.00
0.87 – 34 1.68 127
0.046 64
0.91 – 22
1.25
0.83 – 42 1.65 118
0.052 62
0.89 – 26
1.5
0.87 – 49 1.62 108
0.061 57
0.88 – 30
1.75
0.72 – 57 1.59 95
0.066 55
0.87 – 34
2.00
0.66 – 65 1.54 82
0.069 52
0.86 – 38
2.25
0.61 – 73 1.51 71
0.071 54
0.85 – 43
2.5
0.56 – 81 1.47 60
0.073 60
0.84 – 48
2.75
0.52 – 87 1.45 52
0.074 63
0.83 – 52
3.00
0.49 – 93 1.42 45
0.075 66
0.82 – 56
Data Book
5
03.99
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