BYV12-TAP Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
BYV12-TAP Datasheet PDF : 5 Pages
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www.vishay.com
BYV12, BYV13, BYV14, BYV15, BYV16
Vishay Semiconductors
1000
VR = VRRM
100
10
1
25
16377
50 75 100 125 150 175
Tj - Junction Temperature (°C)
Fig. 5 - Reverse Current vs. Junction Temperature
450
400 VR = VRRM
350
300
250
PR-Limit
at 100 % VR
200
150
PR-Limit
100
at 80 % VR
50
0
25
16378
50 75 100 125 150 175
Tj - Junction Temperature (°C)
Fig. 6 - Max. Reverse Power Dissipation vs. Junction Temperature
40
f = 1 MHz
35
30
25
20
15
10
5
0
0.1
1
10
100
16379
VR - Reverse Voltage (V)
Fig. 7 - Diode Capacitance vs. Reverse Voltage
1000
100
tp/T = 0.5
0.2
10
0.1
0.02
0.01
1
10-5
10-4
949522
Single pulse
10-3
10-2
10-1
100
101
tp - Pulse Length (s)
Fig. 8 - Thermal Response
VRRM = 1000 V
RthJA = 100 K/W
Tamb = 25 °C
45 °C
50 °C
100 °C
70 °C
100
101
IFRM - Repetitive Peak
Forward Current (A)
Rev. 1.8, 20-Feb-18
3
Document Number: 86039
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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