BUK7610-100B(2010) Просмотр технического описания (PDF) - NXP Semiconductors.

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производитель

BUK7610-100B
(Rev.:2010)

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

NXP Semiconductors

BUK7610-100B

N-channel TrenchMOS standard level FET

5. Thermal characteristics

Table 5.

Symbol

Rth(j-mb)

Rth(j-a)

Thermal characteristics

Parameter

thermal resistance

from junction to

mounting base

thermal resistance

from junction to

ambient

Conditions

see Figure 4

mounted on printed-circuit board ;

minimum footprint

Min Typ Max Unit

-

-

0.5 K/W

-

50

-

K/W

1

Zth(j-mb)

(K/W)

δ = 0.5

10−1

10−2

0.2

0.1

0.05

0.02

03ng69

P

δ = tp

T

Single Shot

10−3

10−6

10−5

10−4

10−3

10−2

tp

t

T

10−1

1

tp (s)

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

BUK7610-100B

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 03 — 12 April 2010

© NXP B.V. 2010. All rights reserved.

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