BUK7610-100B(2010) Просмотр технического описания (PDF) - NXP Semiconductors.

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BUK7610-100B
(Rev.:2010)

N-channel TrenchMOS standard level FET

NXP Semiconductors. 

BUK7610-100B

N-channel TrenchMOS standard level FET

Rev. 03 — 12 April 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product has been designed and qualified to

the appropriate AEC standard for use in automotive critical applications.

1.2 Features and benefits

 Low conduction losses due to low

on-state resistance

 Q101 compliant

 Suitable for standard level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive systems

 General purpose power switching

 Motors, lamps and solenoids

1.4 Quick reference data

Table 1. Quick reference data

Symbol

VDS

Parameter

drain-source

voltage

Conditions

Tj ≥ 25 °C; Tj ≤ 175 °C

ID

drain current

VGS = 10 V; Tmb = 25 °C;

see Figure 1; see Figure 3

Ptot

total power

Tmb = 25 °C; see Figure 2

dissipation

Static characteristics

RDSon

drain-source

on-state

resistance

VGS = 10 V; ID = 25 A;

Tj = 25 °C; see Figure 11;

see Figure 12

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

Dynamic characteristics

ID = 75 A; Vsup ≤ 100 V;

RGS = 50 Ω; VGS = 10 V;

Tj(init) = 25 °C; unclamped

QGD

gate-drain charge VGS = 10 V; ID = 25 A;

VDS = 80 V; Tj = 25 °C;

see Figure 13

Min Typ Max Unit

-

-

100 V

[1]

-

-

75 A

-

-

300 W

-

8.6 10 mΩ

-

-

629 mJ

-

22 -

nC

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