BU1006-E3 Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

BU1006-E3

Enhanced isoCink+™ Bridge Rectifiers

Vishay Semiconductors 

www.vishay.com

BU1006, BU1008, BU1010

Vishay General Semiconductor

Enhanced isoCink+™ Bridge Rectifiers

isoCink+™

+ ~~ -

Case Style BU

- ~~+

+~~ -

PRIMARY CHARACTERISTICS

Package

BU

IF(AV)

VRRM

IFSM

IR

VF at IF = 5.0 A

TJ max.

Circuit configuration

10 A

600 V, 800 V, 1000 V

120 A

5 μA

0.88 V

150 °C

In-line

FEATURES

• UL recognition file number E312394

• Thin single in-line package

• Glass passivated chip junction

• Available for BU-5S lead forming option (part

number with “5S” suffix, e.g. BU10065S)

Available

• Superior thermal conductivity

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

TYPICAL APPLICATIONS

General purpose use in AC/DC bridge full wave rectification

for switching power supply, home appliances and

white-goods applications.

MECHANICAL DATA

Case: BU

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS-compliant, commercial grade

Base P/N-M3 - halogen-free, RoHS-compliant, and

commercial grade

Terminals: matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 and M3 suffix meet JESD 201 class 1A whisker test

Polarity: as marked on body

Mounting Torque: 10 cm-kg (8.8 inches-lbs) max.

MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

Maximum repetitive peak reverse voltage

Average rectified forward current (Fig. 1, 2)

Non-repetitive peak forward surge current

8.3 ms single sine-wave, TJ = 25 °C

Rating for fusing (t < 8.3 ms) TJ = 25 °C

Operating junction and storage temperature range

TC = 92 °C (1)

TA = 25 °C (2)

VRRM

IO

IFSM

I2t

TJ, TSTG

Notes

(1) With 60 W air cooled heatsink

(2) Without heatsink, free air

BU1006

600

BU1008

800

10

3.2

120

60

-55 to +150

BU1010

1000

UNIT

V

A

A

A2s

°C

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

TYP.

Maximum instantaneous forward

voltage per diode (1)

IF = 5.0 A

TA = 25 °C

TA = 125 °C

VF

Maximum reverse current per diode rated VR

TA = 25 °C

TA = 125 °C

IR

Typical junction capacitance per diode 4.0 V, 1 MHz

CJ

0.98

0.88

-

64

43

Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

MAX.

1.05

0.95

5.0

250

-

UNIT

V

μA

pF

Revision: 29-Aug-17

1

Document Number: 84801

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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