BUX80 Просмотр технического описания (PDF) - Inchange Semiconductor
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BUX80 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0
VCEsat-1 Collector-emitter saturation voltage IC=5 A;IB=1 A
VCEsat-2 Collector-emitter saturation voltage IC=8 A;IB=2.5 A
VBEsat-1 Base-emitter saturation voltage
IC=5 A;IB=1 A
VBEsat-2 Base-emitter saturation voltage
ICES
Collector cut-off current
IEBO
Emitter cut-off current
IC=8 A;IB=2.5 A
VCE=800V;VBE=0
TC=125℃
VEB=10V; IC=0
hFE
DC current gain
IC=1.2A ; VCE=5V
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A ;IB1=1A; IB2=-2A
VCC=-250V
Product Specification
BUX80
MIN TYP. MAX UNIT
400
V
1.5
V
3.0
V
1.4
V
1.8
V
1.0
3.0
mA
10
mA
30
0.5 μs
3.5 μs
0.5 μs
2
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