BTB16-800B Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.
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BTB16-800B Datasheet PDF : 8 Pages
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BTB16
Rev.E Mar.-2016
DATA SHEET
极限参数 / Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
Repetitive peak off-state voltages
On-state rms current(full sine wave
TC=86℃)
Non repetitive surge peak on-state
current(full cycle, Tj initial = 25 °C)
Non repetitive surge peak on-state
current(full cycle, Tj initial = 25 °C)
I2t value for fusing
Critical rate of rise of on-state current
IG =2xIGT, tr≤100 ns（F=120Hz Tj=125℃）
Non repetitive surge peak off-state
Voltage(tp = 10 ms Tj = 25° C)
Peak gate current(tp =20μs Tj=125℃)
Average gate power dissipation(Tj=125℃)
Maximum operating Junction
Temperature
Storage Temperature Range
Junction to ambient
Junction to case (AC)
符号
Symbol
VDRM/VRRM
IT(RMS)
ITSM(F=50Hz
t=20ms)
ITSM(F=60Hz
t=16.7ms)
I2t(tp=10ms)
dI/dt
VDSM/VRSM
IGM
PG(AV)
Tj
Tstg
Rth(j-a)
Rth(j-c)
数值
Rating
600/800
16
160
168
144
50
VDRM/VRRM
+ 100
4.0
1.0
-40～125
-40～150
60
2.1
电性能参数 / Electrical Characteristics(Ta=25℃)
免缓冲器和逻辑电平（3 象限） / Snubberless and logic level（3 quadrants)
单位
Unit
V
A
A
A
A2s
A/μs
V
A
W
℃
℃
℃ /W
℃ /W
符号
Symbol
IGT(1)
VGT
VGD
IH(2)
IL
dV/dt (2)
(dI/dt)c (2)
测试条件
信号区
Test Conditions
Quadrant
VD=12V RL=33Ω
I-II-III
VD=12V RL=33Ω
VD=VDRM RL=3.3KΩ
Tj=125℃
I-II-III
I-II-III
IT=500mA
I-III
IG=1.2IGT
II
VD = 67 % VDRM gate open
Tj = 125° C
(dV/dt)c = 0.1V/μS Tj = 125° C
(dV/dt)c = 10V/μS Tj = 125° C
Without snubber
Tj = 125° C
Max.
Max.
Min.
Max.
Max.
Min.
Min.
Min.
Min.
Note 1：minimum IGT is guaranted at 5% of IGT max.
Note 2：for both polarities of A2 referenced to A1.
BTB16
SW
CW
BW
10
35
50
1.3
单位
Unit
mA
V
0.2
V
15
35
50
mA
25
50
70
mA
30
60
80
40
500
1000 V/μs
8.5
-
-
3.0
-
-
A/mS
-
8.5
14
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