BSX59 Просмотр технического описания (PDF) - Philips Electronics
Номер в каталоге
Компоненты Описание
производитель
BSX59 Datasheet PDF : 8 Pages
| |||
Philips Semiconductors
NPN switching transistors
Product specification
BSX59; BSX61
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
ICBO
collector cut-off current
IEBO
emitter cut-off current
BSX59
IE = 0; VCB = 40 V
IE = 0; VCB = 40 V; Tj = 150 °C
IC = 0; VEB = 4 V
−
−
−
−
−
−
BSX61
−
−
IEBO
hFE
VCEsat
VCEsat
VBEsat
VBEsat
emitter cut-off current
IC = 0; VEB = 4 V; Tj = 150 °C
DC current gain
IC = 150 mA; VCE = 1 V
IC = 500 mA; VCE = 1 V
IC = 1 A; VCE = 5 V
collector-emitter saturation voltage
BSX59
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
collector-emitter saturation voltage
BSX61
base-emitter saturation voltage
base-emitter saturation voltage
BSX59
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
IC = 1 A; IB = 100 mA
IC = 150 mA; IB = 15 mA
IC = 500 mA; IB = 50 mA
−
−
30 −
30 −
20 −
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.85 −
BSX61
0.7 −
VBEsat
Cc
Ce
fT
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
IC = 1 A; IB = 100 mA
−
−
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
6
IC = ic = 0; VEB = 500 mV; f = 1 MHz −
36
IC = 50 mA; VCE = 10 V; f = 100 MHz 250 −
Switching times (between 10% and 90% levels)
500 nA
300 µA
300 nA
500 nA
50 µA
−
90
−
300 mV
500 mV
1
V
500 mV
700 mV
1.3 V
1
V
1.2 V
1.3 V
1.8 V
10 pF
50 pF
−
MHz
ton
turn-on time
BSX59
BSX61
toff
turn-off time
BSX59
BSX61
ICon = 500 mA; IBon = 50 mA;
IBoff = −50 mA
ICon = 500 mA; IBon = 50 mA;
IBoff = −50 mA
−
17 35 ns
−
18 50 ns
−
45 60 ns
−
70 100 ns
1997 May 22
4
Share Link: 