MGSF1N02ELT1 Просмотр технического описания (PDF) - ON Semiconductor

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производитель

MGSF1N02ELT1

Power MOSFET 750 mAmps, 20 Volts

ON Semiconductor 

MGSF1N02ELT1

TYPICAL ELECTRICAL CHARACTERISTICS

0.2

0.18 VGS = 2.5 V

0.16

TJ = 150°C

0.14

0.12

25°C

0.1

0.08

−55 °C

0.06

0.04

0.02

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus Drain Current

0.14

VGS = 4.5 V

0.12

TJ = 150°C

0.1

0.08

25°C

0.06

−55 °C

0.04

0.02

0

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

1.6

1.5

1.4

1.3

1.2

1.1

1

0.9

0.8

0.7

0.6

−50 −25

VGS = 4.5 V

ID = 1.2 A

VGS = 2.5 V

ID = 1.0 A

0 25 50 75 100 125 150

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation Over

Temperature

5

VDS = 16 V

TJ = 25°C

4

3

2

ID = 1.2 A

1

0

0

2000

4000

6000

8000 10000

QT, TOTAL GATE CHARGE (pC)

Figure 6. Gate Charge

1

TJ = 150°C

25°C

−55 °C

0.1

0.01

0.001

0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9

VSD, DIODE FORWARD VOLTAGE (VOLTS)

Figure 7. Body Diode Forward Voltage

500

450

f = 1 MHz

400

TJ = 25°C

350

300

250

200

150

Ciss

Coss

100

50

Crss

0

0 1 2 3 4 5 6 7 8 9 10

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 8. Capacitance Variation

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