MGSF1N02ELT1 Просмотр технического описания (PDF) - ON Semiconductor
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MGSF1N02ELT1 Datasheet PDF : 4 Pages
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MGSF1N02ELT1
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 10 mA)
V(BR)DSS
20
Zero Gate Voltage Drain Current
(VDS = 20 Vdc, VGS = 0 Vdc)
(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
−
−
Gate−Source Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc)
IGSS
−
ON CHARACTERISTICS (Note 1)
Gate−Source Threshold Voltage (VDS = VGS, ID = 250 mAdc)
VGS(th)
0.5
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 1.0 A)
(VGS = 2.5 Vdc, ID = 0.75 A)
rDS(on)
−
−
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Ciss
−
Output Capacitance
(VDS = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Coss
−
Transfer Capacitance
(VDG = 5.0 Vdc, VGS = 0
V, f = 1.0 Mhz)
Crss
−
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
td(on)
−
Rise Time
Turn−Off Delay Time
(VDD = 5 Vdc, ID = 1.0 Adc,
RL = 5 W, RG = 6 W)
tr
−
td(off)
−
Fall Time
tf
−
Total Gate Charge
(VDS = 16 Vdc, ID = 1.2 Adc,
VGS = 4.0 Vdc)
QT
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
Pulsed Current
ISM
−
Forward Voltage (Note 2) (VGS = 0 Vdc, IS = 0.6 Adc)
VSD
−
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
Typ
Max
Unit
−
−
Vdc
mAdc
−
1.0
−
10
−
± 0.1
mAdc
−
1.0
Vdc
W
−
0.085
−
0.115
160
−
pF
130
−
60
−
6.0
−
ns
26
−
117
−
105
−
6500
−
pC
−
0.6
A
−
0.75
−
−
1.2
V
TYPICAL ELECTRICAL CHARACTERISTICS
2.5
2
TJ = 150°C
1.5
25°C
− 55°C
1
0.5
0
0.5
0.8
1.1
1.4
1.7
2.0
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. Transfer Characteristics
2
2.5 V
1.8
2.25 V 1.75 V
1.6
2.0 V
1.4
1.2
1.5 V
1
0.8
0.6
0.4
VGS = 1.25 V
0.2
0
0
0.5
1
1.5
2
2.5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. On−Region Characteristics
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