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KSMT315P Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.

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Компоненты Описание
производитель
KSMT315P
KERSEMI
Kersemi Electronic Co., Ltd. KERSEMI
KSMT315P Datasheet PDF : 5 Pages
1 2 3 4 5
KERSMI ELECTRONIC CO.,LTD.
KSMT315P/BSP315P
-60V P-channel MOSFET
Notes:
1. The data tested by surface mounted on a 1 inch²FR-4 board 2OZ copper.
2. The data tested by pulse width≤300us,duty cycle≤2%
3. The EAS data shows Max. rating. The test condition is VDD=25v,VGS=10V,L=0.1mH,iAS=17.8A
4. The power dissipation is limited by 150junction temperature.
Typical Characteristics TJ=25unless otherwise noted
www.kersemi.com
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