KSMT315P Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.

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производитель

KSMT315P

-60V P-channel MOSFET

Kersemi Electronic Co., Ltd. 

KSMT315P/BSP315P

KERSMI ELECTRONIC CO.,LTD.

-60V P-channel MOSFET

Symbol

RƟJC

RƟJA

Parameter

Thermal Resistance, Junction to Case1

Thermal Resistance ,Junction to Ambient1

Ratings

—

—

Units

℃/W

Package Marking and Ordering Information

Part NO.

KSMT315P

Marking

KSMT315P

Package

SOT-223

Electrical Characteristics TC=25℃ unless otherwise noted

Symbol

Parameter

Conditions

Min Typ Max Units

Off Characteristics

BVDSS

Drain-Sourtce Breakdown Voltage

VDS=0V,ID=250μA

-60 —

—

v

IDSS

Zero Gate Voltage Drain Current

VDS=0V, VDS=32V

— -0.1 -1 μA

IGSS

Gate-Source Leakage Current

VDS=±20V, VDS=0A

— — ±100 nA

On Characteristics

VGS(th)

GATE-Source Threshold Voltage

VDS=VDS, ID=250μA

——

—

V

RDS(ON)

Drain-Source On Resistance²

VDS=10V,ID=6A

VDS=2.5V,ID=5A

— 0.8 1.4

Ω

— 0.5 0.8

GFS

Forward Transconductance

VDS=5V,ID=12A

—— —

S

Dynamic Characteristics

Ciss

Input Capacitance

Coss

Output Capacitance

Crss

Reverse Transfer Capacitance

VDS=15V,VGS=0V,

f=1MHz

— 130 160

— 40 50 pF

— 17 21

Switching Characteristics

td(on)

Turn-On Delay Time

VDS=20V,

— 24 36 ns

tr

td(off)

Rise Time

Turn-Off Delay Time

— 9 14 ns

VGS=10V,RGEN=3.3Ω

— 32

48

ns

tf

Fall Time

— 19 28 ns

Qg

Total Gate Charge

— 0.7 1.1 nC

Qgs

Gate-Source Charge

VGS=4.5V, VDS=20V,

— 1.8 2.6

nC

Qgd

Gate-Drain “Miller” Charge

ID=6A

— 5.2 7.8 nC

Drain-Source Diode Characteristics

VSD

Source-Drain Diode ForwardVoltage²

VGS=0V,IS =1A

—— —

V

trr

Reverse Recovery Time

— 30. 46

ns

IF=7A,di/dt=100A/μS

5

Qrr

Reverse Recovery Charge

— 36 54

nC

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