KSMT315P Просмотр технического описания (PDF) - Kersemi Electronic Co., Ltd.

Номер в каталоге

Компоненты Описание

производитель

KSMT315P

-60V P-channel MOSFET

Kersemi Electronic Co., Ltd. 

KSMT315P/BSP315P

KERSMI ELECTRONIC CO.,LTD.

-60V P-channel MOSFET

Description

This P-channel MOSFETS use advanced trench technology and design to provide

excellent RDS(on) with low gate charge. It can be used in a wide variety of applications.

Features

BVDSS

RDSON

ID

-60V

0.8Ω

-1.17A

1) Low gate charge.

2) Green device available.

3) Advanced high cell denity trench technology for ultra RDS(ON)

4) Excellent package for good heat dissipation.

SOT-223

Absolute Maximum Ratings TC=25℃,unless otherwise noted

Symbol

VDS

VGS

ID

EAS

PD

TJ, TSTG

Parameter

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current-1

Continuous Drain Current-T=100℃

Pulsed Drain Current2

Single Pulse Avalanche Energy3

Power Dissipation4

Operating and Storage Junction Temperature

Range

Ratings

-60

±20

-1.17

-0.94

—

24

1.8

-55 to

+150

Units

V

V

A

mJ

W

℃

Thermal Characteristics

www.kersemi.com

1

Share Link: