2SB857 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

2SB857

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc-25'C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA ; RBE= °°

V(BR)CBO Collector-Base Breakdown Voltage

lc=-1mA; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -1 mA ; Ic- 0

Vce(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A

VBE(OH) Base-Emitter On Voltage

lc=-1A;VCE=-4V

ICBO

Collector Cutoff Current

VCB= -50V ; IE= 0

hpE-1

DC Current Gain

lc=-1A;VCE=-4V •

hpE-2

DC Current Gain

lc=-0.1A;VCE=-4V

fi

Current-Gain—Bandwidth Product

lc= -0.5A ; VCE= -4V

hpE-1 Classifications

B

C

D

60-120 100-200 160-320

2SB857

MIN TYP. MAX UNIT

-50

V

-70

V

-5

V

-1.0

V

-1.0

V

-1 M A

60

320

35

15

MHz

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