BR5000W Просмотр технического описания (PDF) - New Jersey Semiconductor
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BR5000W Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BR5000W-BR5010W
, JUnc.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
SILICON BRIDGE RECTIFIERS
PRV: 50-1000 Volts
lo : 50Amperes
FEATURES:
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* High case dielectric strength
" Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally
mounted in the bridge encapsulation
* Epoxy : UL94V-O rate flame retardant
* Terminals : Plated lead solderable per
MIL-STD-202, Method 208 guaranteed
* Polarity : Polarity symbols marked on case
* Mounting position : Bolt down on heat-sink
with silicone thermal compound between
bridge and mounting surface for maximum
heat transfer efficiency
* Weight: 15.95 grams
BR50W
T
1.130(28.7)
1.120(28.4)
J
, 0.732 (18,6)
"'
<i"0.692(17.5)
!
.^
\ki>y
TTn
0.470(11.9)
0.430(109)
-0
V
'
-i
"
-0
*—
0.21 (5.3)
0.20(5.1)
0.042(1.06) .[I*
0.038 (0.96)
0.31 0(7. 87) "T~
0.280(7.11) \c
ft
T~
I
1.2(30.5)
MIN.
=D 1
ns in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
CHARACTERISTICS
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
SYMBOL
VRRM
VRMS
VDC
BR
BR
BR
BR
BR
BR
BR
5000W 5001 W 5002W S004W S006W 5008W 501 OW
50 100 200 400 600 800 1000
35
70 140 '280 420 560 700
50 100 200 400 600 800 1000
UNIT
V
V
V
Maximum Average Forward Current Tc=55°C
lF(AV)
50
A
Peak Forward Surge Current Single half sine wave
IFSM
400
A
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
I2t
Maximum Forward Voltage per Diode at IF = 25 A
VF
664
A2S
1.1
V
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance at Junction to Case ( Note 1 )
Operating Junction Temperature Range
Storage Temperature Range
|R
|R(H)
R6JC
TJ
TSTG
10
200
1.0
- 40 to + 150
- 40 to + 150
uA
uA
°C/W
°C
°c
Notes :
1 ) Thermal resistance from Junction to Case with units mounted on heat sink.
Quality Semi-Conductors
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