BLF521 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BLF521 Datasheet PDF : 3 Pages
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UHF power MOS transistor
BLF521
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
VDS
VGS
ID
P.O.
Tstg
Tj
PARAMETER
drain-source voltage
gate-source voltage
drain current (DC)
total power dissipation
storage temperature
junction temperature
CONDITIONS
Tmb < 25 °C
MIN.
-
-
-
-
-65
-
MAX.
40
±20
1
10
150
200
UNIT
V
V
A
W
°C
°c
THERMAL CHARACTERISTICS
SYMBOL
Rth j-mb
Rth j-a
PARAMETER
thermal resistance from junction to mounting base
thermal resistance from junction to ambient; notel
VALUE
17.5
75
UNIT
K/W
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)DSS
bss
less
Vcsth
9fe
RoSon
bsx
Cis
Cos
crs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
MIN.
VGS = 0; ID = 3 mA
40
VGS = 0; VDS = 12.5V
-
VGS = ±20 V; VDS = 0
-
lD = 3 m A ; V D s = 1 0 V
2
ID = 0.3 A; VDS = 10V
80
ID = 0.3 A; VGS = 15V
-
VGS = 15V; VDS = 10V
-
VG5 = 0; VDS = 12.5 V ; f = 1 MHz -
Ves = 0;VDs = 12.5V;f=1MHz -
VGs = 0;VDS = 12.5V;f=1 MHz -
TYP.
-
-
-
-
135
3.5
1.3
5.3
7.8
1.8
MAX.
-
10
1
4.5
-
4
-
-
-
-
UNIT
V
MA
HA
V
mS
a
A
pF
pF
PF
VGS group indicator
GROUP
A
B
C
D
E
F
G
H
J
K
L
M
N
MIN.
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
LIMITS
(V)
MAX.
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
3.1
3.2
3.3
GROUP
O
P
Q
R
S
T
U
V
W
X
Y
z
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
LIMITS
(V)
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
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