BLF175 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BLF175 Datasheet PDF : 4 Pages
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HF/VHF power MOS transistor
BLF175
CHARACTERISTICS
Tj = 25 1JC unless otherwise specified.
SYMBOL
V(BR)DSS
loss
IGSS
Vcsth
AVGS
9fs
RDSOR
IDSX
Cis
Cos
Crs
PARAMETER
drain-source breakdown voltage
drain-source leakage current
gate-source leakage current
gate-source threshold voltage
gate-source voltage difference of
matched pairs
forward transconductance
drain-source on-state resistance
on-state drain current
input capacitance
output capacitance
feedback capacitance
CONDITIONS
ID= 100 mA; VGS = 0
VGS = 0; VDS = 50 V
±VGS = 20 V; VDS = 0
ID= 10mA; VDS = 10V
ID= 10mA; VDS = 10V
b=1 A; VDS = 10V
I D = 1 A; VGS = 10V
VGS = 10 V; VDS = 10V
VGs = 0;VDs = 5 0 V ; f = 1 MHz
VGs = 0; VDS = 5 0 V ; f = 1 MHz
VGs = 0; VDs = 5 0 V ; f = 1 MHz
MIN. TYP. MAX.
125 -
-
-
-
100
-
-
1
2
-
4.5
—
—
100
1.1 1.6 -
-
0.75 1.5
-
5.5 -
-
130 -
-
36 -
-
3.7 -
UNIT
V
HA
uA
V
mV
S
Q
A
PF
PF
PF
group indication
GROUP
A
B
C
D
E
F
G
H
J
K
L
M
N
LIMITS
(V)
MIN.
MAX.
2.0
2.1
2.1
2.2
2.2
2.3
2.3
2.4
2.4
2.5
2.5
2.6
2.6
2.7
2.7
2,8
2.8
2.9
2.9
3.0
3.0
3.1
3.1
3.2
3.2
3.3
GROUP
O
P
Q
R
S
T
U
V
w
X
Y
z
MIN.
3.3
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
LIMITS
(V)
MAX.
3.4
3.5
3.6
3.7
3.8
3.9
4.0
4.1
4.2
4.3
4.4
4.5
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