BLF175 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BLF175 Datasheet PDF : 4 Pages
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HF/VHF power MOS transistor
BLF175
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 60134).
SYMBOL
PARAMETER
VDS
±VGS
ID
Ptot
Tstg
Tj
drain-source voltage
gate-source voltage
DC drain current
total power dissipation
storage temperature
junction temperature
CONDITIONS
Tmb < 25 °C
MIN.
-
-
-
-
-65
-
MAX.
125
20
4
68
+150
200
UNIT
V
V
A
W
O/"4
!C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rthj-mb thermal resistance from junction to mounting base
Rth mb-h thermal resistance from mounting base to heatsink
CONDITIONS
Tmb = 25 °C; Ptot = 68 W
Tmb = 25 °C; Ptot = 68 W
VALUE
2.6
0.3
UNIT
K/W
K/W
10
b
(A)
4 - -\
i
f
/
1 -2-
f
^ \.
\
)
—S
.J
MRAS05
10~1 1
10
VDS(V)
1°2
(1) Cur ent is this area may be limited by RDSOO
(2) Tmb = 25 "C.
Fig.2 DC SOAR.
100
ptot
(W)
80
60
40
20
0
MSP063
\h.
X<2\)
^ \>X,\s
~\' X
j
~"
40
80
120T , _ 160
Th < c>
(1) Con inuous operation.
(2) Sho 1-time operation during m smatch.
Fig.3 Power derating curves.
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