BLU30/12 Просмотр технического описания (PDF) - Philips Electronics

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BLU30/12

UHF power transistor

Philips Electronics 

Philips Semiconductors

UHF power transistor

Product specification

BLU30/12

DESCRIPTION

N-P-N silicon planar epitaxial

transistor primarily intended for use in

mobile radio transmitters in the

470 MHz communications band.

FEATURES:

• multi-base structure and

emitter-ballasting resistors for an

optimum temperature profile

• gold metallization ensures

excellent reliability

• internal matching to achieve an

optimum wideband capability and

high power gain

The transistor has a 6-lead flange

envelope with a ceramic cap

(SOT-119). All leads are isolated from

the flange.

QUICK REFERENCE DATA

Envelope

Mode of operation

Collector-emitter voltage (d.c.)

Frequency

Load power

Power gain

Collector efficiency

Heatsink temperature

PIN CONFIGURATION

handbook, halfpage

1

2

3

4

5

6

MSB006

Fig.1 Simplified outline, SOT119A.

SOT-119

class-B; c.w.

VCE

12,5 V

f

470 MHz

PL

30 W

GP > 6,0 dB

ηC > 55 %

Th

25 °C

PINNING

PIN

1

2

3

4

5

6

DESCRIPTION

emitter

emitter

base

collector

emitter

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.

January 1985

2

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