BGA2714 Просмотр технического описания (PDF) - NXP Semiconductors.
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BGA2714 Datasheet PDF : 15 Pages
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NXP Semiconductors
BGA2714
MMIC wideband amplifier
6. Thermal characteristics
Table 6.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction to Ptot = 200 mW; Tsp = 90 °C
solder point
Typ Unit
300 K/W
7. Characteristics
Table 7. Characteristics
VSUP = 3 V; ISUP = 4.58 mA; Tamb = 25 °C; measured on demo board; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ISUP
supply current
Gp
power gain
f = 100 MHz
f = 250 MHz
3.7 4.58 5.7 mA
20 20.8 21 dB
20 20.7 21 dB
f = 950 MHz
20 20.4 21 dB
f = 2150 MHz
20 20.8 22 dB
f = 2500 MHz
19 19.5 21 dB
f = 3000 MHz
16 16.8 18 dB
RLin
input return loss
f = 250 MHz
f = 950 MHz
11 13.9 - dB
7
8.9 - dB
f = 2150 MHz
12 15.9 - dB
RLout output return loss
f = 250 MHz
f = 950 MHz
10 10.6 - dB
10 10.8 - dB
f = 2150 MHz
8
9.8 - dB
ISL
isolation
f = 250 MHz
55 58 - dB
f = 950 MHz
55 59 - dB
f = 2150 MHz
45 49 - dB
NF
noise figure
f = 250 MHz
-
2.4 2.5 dB
f = 950 MHz
-
2.2 2.3 dB
f = 2150 MHz
-
3.0 3.2 dB
B−3dB −3 dB bandwidth
3 dB below gain -
at 1 GHz
2.7 - GHz
K
Rollet stability factor
f = 250 MHz
25 30 -
f = 950 MHz
35 47 -
f = 2150 MHz
7
10 -
PL(sat) saturated output power
f = 250 MHz
f = 950 MHz
−3 −2.4 -
−4 −3.4 -
dBm
dBm
f = 2150 MHz
−6 −4.7 - dBm
PL(1dB) output power at 1 dB gain compression f = 250 MHz
f = 950 MHz
−8.5 −7.8 -
−8.7 −7.9 -
dBm
dBm
f = 2150 MHz
−10 −9 - dBm
BGA2714_1
Product data sheet
Rev. 01 — 24 May 2007
© NXP B.V. 2007. All rights reserved.
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