BGA420(2002) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

BGA420
(Rev.:2002)

Si-MMIC-Amplifier in SIEGET 25-Technologie

Infineon Technologies 

BGA420

Electrical Characteristics at TA = 25 °C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min. typ. max.

AC characteristics VD = 3 V, Zo = 50 

Device current

Insertion power gain

f = 0.1 GHz

f = 1 GHz

f = 1.8 GHz

Reverse isolation

f = 1.8 GHz

Noise figure

f = 0.1 GHz

f = 1 GHz

f = 1.8 GHz

Intercept point at the output

f = 1 GHz

1dB compression point

f = 1 GHz

Return loss input

f = 1.8 GHz

Return loss output

f = 1.8 GHz

ID

|S21|2

S12

NF

IP3out

P-1dB

RLin

RLout

5.4 6.7

17 19

15 17

11 13

25 28

8 mA

dB

-

-

-

-

-

1.9 2.3

-

2.2 2.6

-

2.3 2.7

10 13

- dBm

-6 -2.5

-

8

11

- dB

12 16

-

Typical biasing configuration

100 pF 10 nF

+VD

100 pF

43

RF OUT

BGA 420

1

2

100 pF

GND

RF IN

EHA07386

Note: 1) Large-value capacitors should be connected from pin 4 to ground right at the device

to provide a low impedance path.

2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin

boards are recommended to minimize the parasitic inductance to ground.

2

Jan-29-2002

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