BGR269 Просмотр технического описания (PDF) - NXP Semiconductors.
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BGR269 Datasheet PDF : 8 Pages
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BGR269
200 MHz, 35 dB gain reverse amplifier
Rev. 6 — 5 August 2010
Product data sheet
1. Product profile
CAUTION
1.1 General description
High performance amplifier in a SOT115J package, operating at a voltage supply of
24 V (DC).
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features and benefits
Excellent linearity
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
35 dB amplification up to 200 MHz
1.3 Applications
Reverse amplifier in two-way CATV systems operating in the 5 MHz to 200 MHz
frequency range
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Gp
power gain
Itot
total current
Conditions
f = 5 MHz
f = 200 MHz
VB = 24 V
Min Typ
34.5 35
35
-
[1] 145 160
Max Unit
35.5 dB
36
dB
175 mA
[1] The module normally operates at VB = 24 V, but is able to withstand supply transients up to VB = 35 V.
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