2SC5232 Просмотр технического описания (PDF) - Toshiba
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2SC5232 Datasheet PDF : 5 Pages
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC5232
General Purpose Amplifier Applications
Switching and Muting Switch Application
2SC5232
Unit: mm
• Low saturation voltage: VCE (sat) (1) = 15 mV (typ.)
@IC = 10 mA/IB = 0.5 mA
• Large collector current: IC = 500 mA (max)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
15
V
12
V
5
V
500
mA
50
mA
150
mW
125
°C
−55 to 125
°C
JEDEC
JEITA
TO-236MOD
SC-59
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-3F1A
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
Weight: 12 mg (typ.)
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1994-03
1
2014-03-01
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