BDW44 Просмотр технического описания (PDF) - New Jersey Semiconductor

Номер в каталоге

Компоненты Описание

производитель

BDW44

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistor

BDW44

ELECTRICAL CHARACTERISTICS

Tc=25"C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -30mA; IB= 0

VcE(sat)-i Collector-Emitter Saturation Voltage ' lc=-5A;lB=-10mA

VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -1OA; IB= -50mA

VBE(on) Base-Emitter On Voltage

lc=-10A;VCE=-4V

-45

V

-2.0 V

-3.0 V

-3.0

V

ICBO

Collector Cutoff Current

VCB= -45V; le= 0

-1.0 mA

ICEO

Collector Cutoff Current

VCE= -22.5V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -5V; lc= 0

hpE-1

DC Current Gain

lc= -5A ; VCE= -4V

1000

hpE-2

DC Current Gain

IG=-10A;VCE=-4V

250

ft

Current-Gain—Bandwidth Product

lc= -3A; Vce= -3V; ftest= 1MHz

4

COB

Output Capacitance

l6=0;VcB= -10V; ftest= 0.1MHz

-2.0 mA

-2.0 mA

MHz

300 pF

Share Link: