BDW44 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BDW44 Datasheet PDF : 2 Pages
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<_/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Ltnc.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BDW44
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCECXSUSP -45V(Min)
• High DC Current Gain
: hFE=1000(Min)@lc=-5A
• Low Collector Saturation Voltage
: VCE(sat)= -2.0V(Max.)@ lc= -5.0A
= -3.0V(Max.)@lc=-10A
• Complement to Type BDW39
APPLICATIONS
• Designed for general purpose and low speed switching
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-45
V
VCEO Collector-Emitter Voltage
-45
V
VEBO Emitter-Base Voltage
-5
V
IG
Collector Current-Continuous
-15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.5
A
85
W
150
•c
-55-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
1.47 -c/w
?Z
w.a
123
R- ^r^ -VW' ' ' • »W 1—
"N 1 BASE
2.COLLECTOR
3.B/HTTER
TO-220C package
;57l- *•
,
«•
r "*
-ert ''TJoy" J-
A
f i w«?JV
f H'
'< 7
K
I
Bv00
«
Rr*-
C
1~
mm
DIM WIN MAX
A 15.70 15.90
B 9.90 10.10
C 4.20 4.40
D 0.70 0.90
F 3.40 3.60
G 4.98 5.18
H 2-70 2.90
J 0.44 0.46
K 13.20 13.40
L 1.10 1.30
Q 2.70 2.90
R 2.50 2.70
S 1.29 1.31
U 6.45 6.65
V 8.66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
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