BDW63D Просмотр технического описания (PDF) - New Jersey Semiconductor
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BDW63D Datasheet PDF : 2 Pages
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Silicon NPN Darlington Power Transistor
BDW63/A/B/C/D
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
BDW63
CONDITIONS
Collector-Emitter
V(BR)CEO Breakdown Voltage
BDW63A
BDW63B lc= 30mA; IB=0
BDW63C
BDW63D
VcE(sat)-1 Collector-Emitter Saturation Voltage lc=2A; IB= 12mA
VcE(sal)-2 Collector-Emitter Saturation Voltage lc= 6A; IB= 60mA
VeE(on) Base-Emitter On Voltage
IG= 2A; VCE= 3V
VECF C-E Diode Forward Voltage
IF=6A
BDW63 VCE= 30V;IB= 0
BDW63A VCE= 30V;IB= 0
I CEO Collector Cutoff Current BDW63B VCE= 40V; IB= 0
BDW63C VCE= 50V; IB= 0
ICBO
IEBO
hpE-1
BDW63D
BDW63
BDW63A
Collector Cutoff Current BDW63B
BDW63C
BDW63D
Emitter Cutoff Current
VCE= 60V; IB= 0
VCB= 45V; le= 0
VCB=45V;le=0;Tj=150'C
VCB= 60V; IE= 0
VCB=60V;lE=0;Tj=150°C
VCB= 80V; IE= 0
VCB=80V;lE=0;Tj=150"C
VCB=100V;IE=0
VCB=100V;lE=0;Tj=150'C
VCB=120V;lE=0
VcB=120V;lE=0;Tj=150'C
VEB= 5V; lc=0
DC Current Gain
lc= 2A; VCE= 3V
hpE-2
DC Current Gain
lc= 6A; VCE= 3V
Switching times
ton
Turn-on Time
toff
Turn-off Time
lc= 3A; lsi=-lB2= 12mA;
VsEioffr -4.5V, RL=10Q
MIN TYP.
45
MAX
UNIT
60
80
V
100
120
2.5
V
4.0
V
2.5
V
3.5
V
0.5
mA
0.2
5.0
0.2
5.0
0.2
5.0
mA
0.2
5.0
0.2
5.0
2.0
mA
750
20000
100
1.0
us
5.0
11 S
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