BDW63D Просмотр технического описания (PDF) - New Jersey Semiconductor

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BDW63D

Silicon NPN Darlington Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, Line.

Silicon NPN Darlington Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

BDW63/A/B/C/D

DESCRIPTION

• Collector Current -lc= 6A

• High DC Current Gain-hFE= 750(Min.)@ lc= 2A

• Complement to Type BDW64/A/B/C/D

APPLICATIONS

• Designed for audio output stages and general amplifier

and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE

BDW63

45

VCBO

Collector-Base

Voltage

BDW63A

60

BDW63B

80

BDW63C

100

BDW63D

120

BDW63

45

VCEO

Collector-Emitter

Voltage

BDW63A

60

BDW63B

80

BDW63C

100

BDW63D

120

VEBO Emitter-Base Voltage

5

Ic

Collector Current-Continuous

6

IB

Base Current-Continuous

0.1

Collector Power Dissipation

@ Ta=25'C

2

PC

Collector Power Dissipation

@ Tc=25t

60

Tj

Junction Temperature

150

Tstg

Storage Temperature Range

-65-150

UNIT

V

V

V

A

A

W

'C

°c

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c

Rth j-c

Thermal Resistance, Junction to Case

Thermal Resistance, Junction to Case

MAX UNIT

2.08 'C/W

62.5 'C/W

Quality Semi-Conductors

W

I

III

123

T2

-K )-,

-AV^J-M"

R1

R2

PIN 1.BASE

4—I

ft 3

I. COLLECTOR

3. EMITTER

TO-220C package

«—B—M

4 i ^ert

A

e

-J

\

f* H*

«-L

i

K

I!

J! 1

H•k-j

t *—

ii~~iI t= iI

mm

DIM MIN MAX

A 15.70 15.90

B 9.90 10.10

C 4.20 4.40

D 0.70 0.90

F 3.40 3.60

G 4.98 5.18

H 2.70 2.90

J 0.44 0.46

K 13.20 13.40

L 1.10 1.30

Q 2.70 2.90

R 2.50 2.70

S 1.29 1.31

u 6.45 6.65

V 8.66 8.86

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