BDW64 Просмотр технического описания (PDF) - New Jersey Semiconductor

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BDW64

PNP SILICON POWER DARLINGTONS

New Jersey Semiconductor 

BDW64, BDW64A, BDW64B, BDW64C, BDW64D

PNP SILICON POWER DARLINGTONS

electrical characteristics at 25°C case temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN TYP MAX

BDW64

-45

Collector-emitter

(BR)CEO breakdown voltage

lc= -30mA

IB = 0

(see Note 5)

BDW64A

-60

BDW64B

-80

BDW64C

-100

BDW64D

-120

VCE= -30V IB = 0

BDW64

-0.5

Collector-emitter

CEO cut-off current

VCE= -30V

VCE= -40V

VCE= -50V

IB = 0

IB = 0

IB = 0

BDW64A

-0.5

BDW64B

-0.5

BDW64C

-0.5

VCE= -60V IB = 0

BDW64D

-0.5

VCB= -45V IE = 0

BDW64

-0.2

VCB= -60V IE = 0

BDW64A

-0.2

VCB= -80V IE = 0

BDW64B

-0.2

'ceo

Collector cut-off

current

'EBO

FE

VBE<°">

CE(sat)

EC

Emitter cut-off

current

Forward current

transfer ratio

Base-emitter

voltage

Collector-emitter

saturation voltage

Parallel diode

forward voltage

VCB = -100V

VCB = -120V

VCB= -45V

VCB = -60 V

VCB= -80V

VCB = -100V

VCB = -120V

VEB = -5V

VCE = -3V

VCE= -3V

IE = 0

IE = 0

IE = 0

IE = 0

IE = 0

IE = 0

IE = 0

lc = 0

IQ = -2 A

IC = -6A

VCE= -3V IC = -2A

IB- -12mA

| B _ -60mA

IF= _6 A

'c~'2

IC = -6A

IR = 0

TC = 150°C

Tc = 1 50°C

TC*150°C

TC = 150°C

TC = 150°C

BDW64C

BDW64D

BDW64

BDW64A

BDW64B

BDW64C

BDW64D

750

(see Notes 5 and 6)

100

(see Notes 5 and 6)

(see Notes 5 and 6)

-0.2

-0.2

-5

-5

-5

-5

-5

-2

20000

-2.5

-2.5

-4

-35

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 MS, duty cycle ; 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

UNIT

V

mA

mA

mA

V

V

V

thermal characteristics

Rejc

ROJA

PARAMETER

Junction to case thermal resistance

Junction to free air thermal resistance

MIN TYP MAX UNIT

2.08 °C/W

62.5 °c/w

resistive-load-switching characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS t

ton Turn-on time

toB Turn-off time

IC = -3A

VBE(off) = 4.5 V

lB(on) = -12mA

RL = 10Q

lB(off) = 12mA

tp = 20^,dc<2%

Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.

MIN TYP MAX UNIT

1

MS

5

MS

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