BD238 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD238 Datasheet PDF : 3 Pages
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Silicon PNP Power Transistor
BD234/236/238
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD234 ,
-45
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BD236 lc= -100mA; IB=0
-60
V
BD238
-80
VcE(sat) Collector-Emitter SaturationVoltage IC=-1.0A;IB=-0.1A
VBE(OH) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
lc=-1.0A;VCE=-2V
VCB= VcBOmaxi !E= 0
VCB= VcBona*; !E=0;Tj=150'C
VEB= -5V; lc= 0
-0.6 V
-1.3 V
-0.05
-1.0 mA
-0.2 mA
hpE-1
DC Current Gain
lc=-150mA; VCE=-2V
40
250
hFE-2
DC Current Gain
lc=-1-OA;VcE=-2V
25
fi
Current-Gain—Bandwidth Product lc= -250mA;VcE=-10V,ftest= 1.0MHz 3.0
Switching Times
MHz
*on
Turn-On Time
toff
Turn-Off Time
0.3
us
0.7
ws
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