BD238 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD238 Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
lJ\oducti, {Jnc.
Silicon PNP Power Transistor
DESCRIPTION
• DC Current Gain-
: hFE=40(Min)@lc=-0.15A
• Complement to Type BD233/235/237
APPLICATIONS
• Designed for use in 5-10 watt audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
BD234
-45
VCBO Collector-Base Voltage BD236
-60
V
BD238
-100
BD234
-45
VCEO Collector-Emitter Voltage BD236
-60
V
BD238
-80
Collector-Emitter
VCER
Voltage(RBE=1k«)
BD234
-45
BD236
-60
V
BD238
-100
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25°C
Tj
Junction Temperature
-0.5
A
25
W
150
'C
Tstg
Storage Temperature Range
-65-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Rth j-a
Thermal Resistance.Junction to Case
Thermal Resistance.Junction to Ambient
MAX
5
100
UNIT
°c/w
"C/W
TELEPHONE: (973)376-2922
(212)227-6005
FAX: (973) 376-8960
BD234/236/238
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2. COLLECTOR
3. BASE
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DIM MIN MAX
A 10.70 10.90
B 7.70 7.90
C 2.60 2.80
D 0.66 0.36
F 3.10 3.30
G 4.48 4.6S
H 2.00 2.20
J 1.35 1.SS
K 16.10 16.30
0 3JO 3.90
R 0.40 0.60
V
1.17 1.37
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