BDX14A Просмотр технического описания (PDF) - Inchange Semiconductor

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BDX14A

Silicon PNP Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistor

isc Product Specification

BDX14A

DESCRIPTION

·Continuous Collector Current-IC= -4A

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS)= -55V(Min.)

APPLICATIONS

·Designed for LF Large Signal Power Amplification

and Medium Current Switching

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-90

V

VCER

Collector-Emitter Voltage RBE= 100Ω

-60

V

VCEO

Collector-Emitter Voltage

-55

V

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-4

A

IB

Base Current-Continuous

-2

A

PC

Collector Power Dissipation@TC=25℃

29

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance,Junction to Case

MAX UNIT

6.0 ℃/W

isc website：www.iscsemi.com

1 isc & iscsemi is registered trademark

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