BD235 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD235 Datasheet PDF : 3 Pages
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Silicon NPN Power Transistor
BD233/235/237
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD233 '
45
Collector-Emitter
VcEO(SUS) Sustaining Voltage
BD235 lc= 100mA; IB=0
60
V
BD237
80
VcE(sat) Collector-Emitter Saturation Voltage lc=1.0A; IB=0.1A
VsE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
lc=1.0A; VCE=2V
VGB= VcBOmax! !E= 0
VcB=VCBOmax; IE= 0; Tj= 1 50'C
VEB= 5V; lc= 0
0.6
V
1.3
V
0.05
1.0
mA
0.2 mA
hpE-1
DC Current Gain
lc=150mA; VCE=2V
40
250
hpE-2
DC Current Gain
lc=1.0A;VCE=2V
25
, fr
Current-Gain—Bandwidth Product lc= 250mA;VCE= 10V,f,est= 1.0MHz 3.0
Switching Times
MHz
ton
Turn-On Time
toff
Turn-Off Time
0.4 1.0 u s
1.5 3.0 u s
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