BD235 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD235 Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Una.
Silicon NPN Power Transistor
DESCRIPTION
• DC Current Gain-
: hFE=40(Min)@lc=0.15A
• Complement to Type BD234/236/238
APPLICATIONS
• Designed for use in 5-10 watt audio amplifiers and drivers
utilizing complementaryor quasi complementary circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25t)
SYMBOL
PARAMETER
VALUE
UNIT
BD233
45
VCBO
Collector-Base Voltage BD235
60
V
BD237
100
BD233
45
VCEO
Collector-Emitter Voltage BD235
60
V
BD237
80
VCER
Collector-Emitter
Voltage(RBE=1kO)
BD233
45
BD235
60
V
BD237
100
VEBO
Emitter-Base Voltage
5
V
Ic
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
6
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ Tc=25r
Tj
Junction Temperature
0.5
A
25
W
150
•c
Tstg
Storage Temperature Range
-65-150 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
R(h j-c
Rth j-a
Thermal Resistance.Junction to Case
5
Thermal Resistance.Junction to Ambient 100
"C/W
r/w
Qualify 5emi-Conducfors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
BD233/235/237
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2. COLLECTOR
3. BASE
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t 23
mm
DIM MIM MAX
A 10.70 10.90
B 7.70 7.90
C 2.60 2.30
D 0.66 0.36
F 3.10 J.30
G 4.43 4.68
H 2.00 2.20
J 1.35 1.55
K 16.10 16.30
0 3.70 3.M
R 0.40 0.60
W
1.17 1.37
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