BD237 Просмотр технического описания (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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Компоненты Описание

производитель

BD237

Silicon NPN transistor in a TO-126 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

BD237

Rev.F Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Peak Collector Current

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

ICM

PC(Tc=25℃ )

Tj

Tstg

DATA SHEET

数值

Rating

100

80

5.0

2.0

6.0

25

150

-55～150

单位

Unit

V

V

V

A

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Emitter Breakdown

Voltage*

符号

Symbol

*VCEO

测试条件

Test Conditions

IC=100mA IB=0

Collector Cut-Off Current

ICBO

VCB=80V

IE=0

Emitter Cut-Off Current

IEBO

VEB=5.0V IC=0

DC Current Gain

Collector to Emitter Saturation

Voltage*

Base to Emitter On Voltage*

*hFE(1)

*hFE(2)

*VCE(sat)

*VBE

VCE=2.0V

VCE=2.0V

IC=1.0A

VCE=2.0V

IC=150mA

IC=1.0A

IB=0.1A

IC=1.0A

Transition Frequency

fT

VCE=10V IC=250mA

* Pulse test: pulse width =300μs;duty cycle 1.5%.

* 脉冲测试：脉宽=300μs；占空比 1.5%。

最小值 典型值 最大值 单位

Min Typ Max Unit

80

V

0.1 mA

1.0 mA

40

25

0.6 V

1.3 V

3.0

MHz

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