BD246 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BD246 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
BD246/A/B/C
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD246
-45
BD246A
-60
Collector-Emitter
V(BR)CEO Breakdown Voltage
|_— OHmA -Im —fl
V
BD246B
-80
BD246C
-100
VcE(sat)-1 Collector-Emitter Saturation Voltage IC=-3A;IB=-0.3A
VcE(sat)-2 Collector-Emitter Saturation Voltage |C=-10A;IB=-2.5A
-1.0 V
-4.0 V
VeE(on)-i Base-Emitter On Voltage
VBE(on)-2 Base-Emitter On Voltage
BD246
lc=-3A;VCE=-4V
lc=-10A;VCE=-4V
VCE= -55V; Vee= 0
-1.6 V
-3.0 V
Collector
ICES
Cutoff Current
BD246A
BD246B
VCE= -70V; VBE= 0
VCE= -90V; VBE= 0
-0.4 mA
BD246C
VCE=-115V; VBE=0
Collector
ICEO
Cutoff Current
BD246/A VCE= -30V; IB= 0
BD246B/C VCE= -60V;IB= 0
-0.7 mA
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
-1.0 mA
hpE-1
DC Current Gain
lc=-1A;VCE=-4V
40
hFE-2
DC Current Gain
lc= -3A ; VCE= -4V
20
hpE-3
DC Current Gain
lc=-10A;VCE=-4V
4
fl
Current-Gain—Bandwidth Product lc= -0.5A;VGE= -10V,ftest= 1.0MHz 3.0
MHz
Switching times
ton
Turn-on Time
toff
Turn-off Time
lc=-1A;lBi=-lB2=-0.1A;
RL=20 fi ; VBE(OFF)= 3.7V
0.2
us
0.8
ps
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