BC846S Просмотр технического описания (PDF) - Siemens AG

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BC846S

NPN Silicon AF Transistor Array

Siemens AG 

BC 846S

Electrical Characteristics at TA=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min. typ. max.

DC Characteristics per Transistor

Collector-emitter breakdown voltage

IC = 10 mA, IB = 0

Collector-base breakdown voltage

IC = 10 µA, IB = 0

Collector-emitter breakdown voltage

IC = 10 µA, VBE = 0

Emitter-base breakdown voltage

IE = 10 µA, IC = 0

Collector cutoff current

VCB = 30 V, IE = 0

Collector cutoff current

VCB = 30 V, IE = 0 , TA = 150 °C

DC current gain 1)

IC = 10 µA, VCE = 5 V

IC = 2 mA, VCE = 5 V

V(BR)CEO 65

-

-V

V(BR)CBO 80

-

-

V(BR)CES 80

-

-

V(BR)EBO 6

-

-

ICBO

-

-

15 nA

ICBO

-

-

5 µA

hFE

-

-

250

-

200 290 450

Collector-emitter saturation voltage1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

Base-emitter saturation voltage 1)

IC = 10 mA, IB = 0.5 mA

IC = 100 mA, IB = 5 mA

VCEsat

VBEsat

mV

-

90 250

-

200 650

-

700

-

- 900 -

Base-emitter voltage 1)

IC = 2 mA, VCE = 5 V

IC = 10 mA, VCE = 5 V

VBE(ON)

580 660 700

-

- 770

1) Pulse test: t < 300µs; D < 2%

SSeemmicioconndduuctcotor rGGrorouupp

22

Ma 1-19928--11919-081

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