BC440 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BC440 Datasheet PDF : 1 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BC440
BC441
TELEPHONE: (973) 376-2922
r*SN>ls*xN
BC 46 0
(212)227-6005
FAX: (973) 376-8960
BC461
THE BC440, BC441, BC460, BC461 ARE SILICON PLANAR
EPITAXIAL TRANSISTORS FOR AP DRIVERS AND OUTPUTS,
AS WELL AS FOR SWITCHING APPLICATIONS UP TO 1
AMPERE. THE BC440, BC441 ARE NPN AND ARE COMPLE-
MENTARY TO THE PNP BC460, BC461 RESPECTIVELY.
CASE TO-39
ABSOLUTE MAXIMUM RATINGS f°'__"in" ""'"'• ""'"^'ndcuff"" '*'"** *r* "
Collector-Emitter Voltage
VCER
Collector-Emitter Voltage (ls=0)
Emitter-Base Voltage
VCEO
VEBO
Collector Current
1C
Collector Peak Current
Total Power Dissipation (Tc<25°C,vCE*a0y)
Operating Jionction A Storage Temperature
j, Tstg
BC440(NPN)
BC460(PNP)
50V
40V
5V
BC441(NPN)
BC46l(PNP)
75V
60V
5V
1A
2A
low
1W
-55 to 20QOC
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
SYMBOL
BC440
BC441
BC460
BC461
MIN MAX MIN MAX
Collector-Emitter Breakdown
LVcEO * 40
60
Voltage
UNIT
V
Emitter-Base Breakdown Voltage
Collector Cutoff Current
BVgBO
ICBO
5
100
5
V
100 nA
Collector Cutoff Current
JCER
10
Collector-Emitter Saturation
VCE(sat)*
1
Voltage
jiA
10 jiA
1V
Base-Emitter Saturation Voltage
D.C. Current Gain
Group 4
Group 5
Group 6
Current Gain-Bandwidth Product
VBE(sat)*
1.5
1.5 V
HFE *
40 250 40 250 V
40 70 40 70
60 150 60 IJO
115 250 115 250
20
fT
50
50
MHz
Collector-Base Capacitance
Cob
25
25 pF
TEST CONDITIONS
IC-100mA IB-O
IB-O. 1mA Ic-0
VQB-40V IB-O
VCE-50V RtE-lOOfl
VCE-70V RBE-lOOn
IC-IA IB-O.IA
IC-IA IB-O. i A
lC-500mA VCB-4V
IC-IA VCE-2V
IC-50mA VCE^4V
YCB-10V I»*o •»
f-!MH«
(
i
Quality Semi-Conductors
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