BC184B Просмотр технического описания (PDF) - New Jersey Semiconductor
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BC184B Datasheet PDF : 3 Pages
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J.
C/
, Una.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U S A . NRN S|L|CON PLANAR EPITAXIAL TRANSISTORS
TELEPHONE: (973) 376-2922
(212)227-6005
BC182, A, B
BC183, A, B, C
BC184, B, C
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
ELECTRICAL CHARACTERISTICS (Ta=25°C unless specified otherwise)
DESCRIPTION
DC Current Gain
SYMBOL
TEST CONDITION
WIN
hFE
lc=10nA,VCE=5V
BC182/183
40
BC184
100
lc=2mA, VCE=5V
BC182
120
BC183
120
BC184
240
lc=100mA, VCE=5V
BC182
80
BC183
80
BC184
130
Collector Emitter Saturation Voltage VCE (sat>
lc=10mA, lB=0.5mA
*lc=100mA, !B=5mA
Base Emitter Saturation Voltage
VBE (sat)
*lc=100mA, !B=5mA
Base Emitter On Voltage
VBE (on)
lc=100(iA. VCE=5V
lc=2mA, VCE=5V
0.55
lc=100mA, VCE=5V
SMALL SIGNALCHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Transistors Frequency
fT lc=0.5mA, VCE=3V, f=100MHz
BC182
BC183
BC184
lc=10mA, VCE=5V, f=100MHz 150
Output Capacitance
Input Capacitance
Cob
VCB=10V, IE=0, f=1MHz
cib
VBE=0.5V, lc=0, f=1MHz
Small Signal Current Gain
hfe
lc=2mA, VCE=5V, f=1KHz
BC182
125
BC183
125
BC184
240
BC182A/BC183A
125
BC182B/183B/184B
240
BC183C/184C
450
Noise Figure
NF lc=0.2mA, VCE=5V, Rs=2 kQ,
f=30Hz to 15KHz
BC184
lc=0.2mA, VCE=5V, Rs=2 kfi,
f=1kHz, F=200Hz
BC182/BC183
BC184
TYP MAX
500
800
800
0.25
0.60
1.2
0.50
0.70
0.83
TYP
MAX
100
120
140
> 5.0
8.0
500
900
900
260
500
900
4.0
10
4.0
UNITS
V
V
V
V
V
V
UNITS
MHz
MHz
MHz
MHz
PF
PF
dB
dB
dB
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